A Pivotal Event - NVMTS 2024

The NVMTS 2024 (Non-Volatile Memory Technology Symposium) was a pivotal event that gathered leading experts from both academia and industry to discuss significant advancements in non-volatile memory technologies, including Flash, MRAM, PCRAM, RRAM, and FeRAM.

Keynote speakers included Prof. Cheol Seong Hwang from Seoul National University, who addressed innovations in Ferroelectric Field-Effect Transistors (FeFETs), highlighting potential improvements in memory device performance. Dr. Stefan Slesazeck from NaMLab presented on Ferroelectric Tunneling Junctions (FTJs), showcasing their unique properties for scalable and energy-efficient applications, especially in neuromorphic computing. Other distinguished speakers included Dr. Stefan Mueller discussing Ferroelectric Hafnia and its promising applications in high-performance memory devices, and Prof. Jin-Seong Park focusing on the use of ALD Oxide Semiconductors for enhancing 3D V-NAND structures. Prof. Aaron Thean from the National University of Singapore introduced the concept of Rewiring Chips to improve data processing efficiency. Additionally, Prof. Suman Datta emphasized opportunities in emerging ferroelectric memory technologies for next-generation devices.

For more details on the event, visit the NVMTS 2024 website.

Find the abstracts of the poster and presentation here.