Publications

Dive into the world of Ferro4EdgeAI through our comprehensive collection of public deliverables, publications, press releases, newsletters and other promotional materials. Here, you will be able to find detailed reports, and updates about our research in ferroelectric-based accelerators for Edge AI. Our library showcases our work towards achieving a 2500x gain in energy efficiency, breaking new grounds in AI hardware technology.

Publications in Journals

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Oxygen vacancy engineering in Si-doped, HfO2 ferroelectric capacitors using Ti oxygen scavenging layers

Abstracts

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CMD31 - A Ferroelectric-based Non-Volatile SRAM Optimized for Critical Embedded Systems

CMD31 - High energy storage antiferroelectric fluorite nanosupercapacitors

CMD31 - Deposition optimization, infrared spectroscopy and ab initio simulations of ferroelectric HfZrO2 thin films

CMD31 - Multilevel switching in ferroelectric hafnia capacitors and tunnel junctions

NVMTS 2024 - Ferroelectric tunneling junctions: prospects for memory and beyond

NVMTS 2024 - Polarization dependent oxygen vacancy distribution in ferroelectric Hf0.5Zr0.5O2 capacitors

Conference Materials

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