International Conference on Solid State Device and Materials 2024 draws over 1,000 experts to Japan
From September 1 to September 4, the 2024 International Conference on Solid State Device and Materials (SSDM) convened in Himeji, Japan, bringing together more than 1,000 researchers, students, and industry professionals to discuss advancements in solid-state technologies.
The conference showcased innovations in a range of areas, including advanced CMOS, emerging memory technologies, heterogeneous integration, power devices, photonics, and next-generation materials and circuits.
Among the conference's many areas of focus, the "Advanced and Emerging Memories and New Applications" track garnered the most attention. This popular segment featured numerous presentations on ferroelectric hafnia, a material with promising applications in memory technology. Notably, several research teams highlighted the potential of HfO₂/ZrO₂ nanolaminates as an alternative to traditional HfZrO₄ solid solution films, emphasizing their ability to enhance remanent polarization and reduce current densities in ferroelectric thin films.
With groundbreaking research and industry collaboration, SSDM 2024 underscored the importance in advancing solid-state technology and its applications across a range of cutting-edge fields. For more information, visit the conference website at ssdm.jp.
Two Ph.D. students from CEA had a chance to present their work on the ferro topic, highlighting the strong dynamics of the European community in this research field:
F. Berthaud et al., New insight of ferroelectric Hf0.5Zr0.502 properties under cryogenic temperatures in integrated ferroelectric capacitors
J. Laguerre et al., Recovery Strategies and Related Mechanisms to Overcome Fatigue-Limited Endurance on HZO-based FeCAP and FeRAM Arrays