70th Annual IEEE International Electron Devices Meeting in San Francisco, CA, USA 7-11 December 2024
IEDM is the most important international forum for the presentation of technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling. This year, more than 2,000 researchers, students, and industry professionals attended to discuss advancements in solid-state technologies.
The meeting kicked off with keynote speeches from TSMC, AMD and WolfSpeed discussing new technology frontiers, energy efficient architectures and silicon carbide.
In total, 274 oral presentations were made, half from Asia, 26% from the US and 18% from Europe.
Ferroelectric technology was well represented in many different sessions, some dedicated, some of much broader appeal and implications: 4 Memory and Ferroelectric Material Reliability; 11 Embedded memories; 15 memory and Computing enabled by Material innovations; 30 Ferroelectric FET and NAND Flash Memories; 37 Materials and Process Advances for Ferroelectric Memory Applications; 38 Ferroelectrics and Beyond. The European ferroelectric community is particularly strong but the competition is hotting up.
Laurent Grenouillet from CEA presented the successful 1T-1C FeRAM developments at 22nm FDSOI node (design, integration, and electrical characterization) (Simon Martin, the first author of the paper, was unable to attend because his first child was born just before IEDM, congratulations!) (paper 11-2). Among the impressive results obtained at 22 nm node is the 1010 endurance without fail at 1kbit array level.
The paper has already attracted immense interest from the community, featured for example in Embedded, Semiconductor digest and EE journal, and many others.
Other ferroelectric highlights of the conference include:
Paper 4-7 Memory window narrowing due to charge trapping, presented by Seong-Kun Cho (Tokyo University).
Quantification of oxygen vacancies by changes in the XAS white line shape (4-8), Yunzhe Zheng (East China Normal University)
Thomas Mikolajick from NaMLab gave an invited talk (15-2) on Ferroelectric materials and their applications for next-generation integrated devices.
Leming Jiao (National University of Singapore) discussed double switching dynamics, fast direct and longer accumulative switching (17-5).
Shan Deng (17-6) from Notre Dame presented results on Vertical 2T-nC FeRAM and their scalability potential, results very relevant to Ferro4EdgeAI, allowing to write a a FeRAM but read (non-destructively) as a FeFET-2.
Zhuo Chen (30-5) from IMEC showed how the incorporation of ultra-thin Nb2O5 can optimize the performance of High-Endurance (>1010) and Fast-Erase Oxide-Semiconductor Channel FeFETs by acting as both an oxygen reservoir and a barrier to charge injection.
The group of Asif Kahn (Ferro4Edge advisory board member) was well represented by Nashrah Afroze (GeorgiaTech) with a paper on self-healing FeCAPs (4-3).
In addition, CEA-Leti organized a successful fringe event on the Sunday evening at the Nikko hotel, introduced by Jean-René Lèquepeys, which attracted some 120 participants, to hear the latest news on energy efficiency with particular emphasis on packaging. Participants were also informed of the possibilities to test technology innovation using the new FAMES pilot line, coordinated by CEA-Leti for the development of greener electronics with energy saving chips, funded by the EU’s Chips-Joint Undertaking and by individual member states.
“We hope that Ferro4EdgeAI partners will be able to make some decisive contributions to IEDM 2025”, Nick Barrett (coordinator of the Ferro4EdgeAI project)