Advancements in Memory Technology: Highlights from the 2024 International Memory Workshop

2024 International Memory Workshop took place in Seoul, South Korea, from May 12 to May 15. This workshop is an unavoidable event in the field of both standalone and embedded memories.

This year most of the papers (40%) were devoted to DRAM and Flash, which are mainstream memories. The growing trend of papers related to ferroelectric hafnia was confirmed (18%), together with papers dealing with Compute in Memory (CiM) and Neuromorphics (12%). One can also note the research on oxide semiconductors is improving towards monolithic 3D integrated circuits, and they can be used for access transistor in 1T1C DRAM, or 2T0C for embedded DRAM, or BEOL FETs for eNVM (cf paper from Samsung)

Among the highlights of this conference, one can also mention the invited talk from Ashonita Chavan from Micron, on “Materials Engineering for High Performance Ferroelectric Memory”,following the first 32Gb NV-DRAM demonstration from Micron unveiled at IEDM 2023.

CEA’s work was also highlighted as a Late News paper, presenting a new approach to sense FeRAM arrays. This breakthrough allows to avoid the memory window decrease when bitline capacitance increases for larger arrays.